Modulation of Exchange Bias in La_0.35Sr_0.65MnO₃/La_0.7Sr_0.3MnO₃ through Volatile Polarization of P(VDF‐TrFE) Gate Dielectric

Electric-field regulation of magnetic properties in perovskite manganites has attracted much attention for its potential spintronics. For antiferromagnetic manganites, fewer studies are reported due to technological difficulties probing their properties. Here, negative exchange bias (EB) is realized epitaxial antiferromagnetic/ferromagnetic manganite bilayers with atomically flat interfaces. The low-voltage pulse modulation EB demonstrated using the field-effect device geometry ferroelectric copolymer, polyvinylidene fluoride trifluoroethylene as a dielectric gating layer, La0.35Sr0.65MnO3 (AF-LSMO) pinning and ferromagnetic La0.7Sr0.3MnO3 (FM-LSMO) conduction channel. Instead non-volatile polarizations control EB, volatile field effect transistors suggested be capable modulating EB. With high-resolution electron microscopy spectroscopy, attributed creation/annihilation oxygen vacancies AF-LSMO layer via pulses. This study reveals electric devices highlights physical oxide insulators.